Samsung - DDR5 - module - 8 GB - SO-DIMM 262-pin - 5600 MHz - CL40 - 1.1 V - unbuffered

Categoria: DRAM
Código: M425R1GB4PB0-CWM
Marca: Samsung
Garantia: Desconhecido
Imagems com fins ilustrativos somente
Estoque Qtd Entrega estimada Preço
IVA
DE501 61 20/11/2024 ~ 4 semanas 54,22
DE712 20 27/11/2024 ~ 4 semanas 69,32
AT679 0 ~ 4 semanas 59,74
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Product Description
Samsung - DDR5 - module - 8 GB - SO-DIMM 262-pin - 5600 MHz - unbuffered
Product Type
Memory module
Capacity
8 GB
Memory Type
DDR5 SDRAM - SO-DIMM 262-pin
Upgrade Type
Generic
Speed
5600 MHz
Latency Timings
CL40
Features
Single rank, unbuffered
Voltage
1.1 V
Capacity
8 GB
Upgrade Type
Generic
Type
DRAM memory module
Technology
DDR5 SDRAM
Form Factor
SO-DIMM 262-pin
Speed
5600 MHz
Latency Timings
CL40
Features
Single rank, unbuffered
Chips Organization
X16
Voltage
1.1 V
← De volta
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